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Graphene has a range of unique physical properties^, and could be of use in the development of a variety of electronic, photonic and photovoltaic devices^,,. For most applications, large-area high-quality graphene films are required and chemical vapour deposition (CVD) synthesis of graphene on copper surfaces has been of particular interest due to its simplicity and cost effectiveness^,,,,,,,,,. However, the rates of growth for graphene by CVD on copper are less than 0.4 μm s^–1, and therefore the synthesis of large, single-crystal graphene domains takes at least a few hours. Here, we show that single-crystal graphene can be grown on copper foils with a growth rate of 60 μm s^–1. Our high growth rate is achieved by placing the copper foil above an oxide substrate with a gap of ∼15 μm between them. The oxide substrate provides a continuous supply of oxygen to the surface of the copper catalyst during the CVD …